BLA0912-250R
Description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. 0.1 36 3300 22 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Key Features
- High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance.
