AO4930 transistor equivalent, dual n-channel enhancement mode field effect transistor.
FET1 VDS (V) = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8mΩ (V GS = 10V) <23mΩ (V GS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crs.
OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY .
The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky .
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