AO4916A transistor equivalent, dual n-channel enhancement mode field effect transistor.
Q1
Q2
VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 17mΩ <17mΩ (VGS = 10V) RDS(ON) < 27mΩ <27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, .
OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY .
The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in p.
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