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AO4900A Datasheet Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky.

General Description

The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further.

Key Features

  • VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V).

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