AO4922 transistor equivalent, dual n-channel enhancement mode field effect transistor.
FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 18.5mΩ
General Description
The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate ch.
OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY .
The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky w.
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