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AO4485 - 40V P-Channel MOSFET

General Description

The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a DC-DC converter application.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4485 40V P-Channel MOSFET General Description The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Product Summary VDS (V) = -40V ID = -10A RDS(ON) < 15mΩ RDS(ON) < 20mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.3mH G EAR -12 -10 -9 -8 -120 -28 118 Power Dissipation A TA=25°C TA=70°C 3.