AO4480
Description
The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.
2.Features
VDS (V)=40V ID=14A RDS(ON)<12mΩ(VGS=10V) RDS(ON)<16mΩ(VGS=4.5V)
3.Pinning information
Pin 4 1,2,3 5,6,7,8
Symbol G S D
Description
GATE
SOURCE DRAIN
SOP-8
4.Absolute Maximum Ratings TA= 25°C
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current AF
Pulsed Drain Current B
Power Dissipation
Avalanche Current B Repetitive avalanche energy 0.3m H B unction and Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C
Symbol VDS VGS
IDSM
IAR EAR TJ, TSTG
Rating 40 ±20 14 11 70 3.1 2 30 135
-55 to 150
Units V
W W A m J °C
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
1 of 11
.umw-ic.
UMW AO4480
40V N-Channe I MOSFET
5.Thermal Characteristics
Parameter
Symbol...
