Download AO4485 Datasheet PDF
Kexin Semiconductor
AO4485
Features - VDS (V) =-40V - ID =-10 A (VGS =-10V) - RDS(ON) < 15mΩ (VGS =-10V) - RDS(ON) < 20mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25°C TA=70°C Repetitive avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range L=0.3m H TA=25°C TA=70°C Symbol VDS VGS IDM IAR EAR Rth JA Rth JC TJ Tstg 10 Sec Steady State -40 ±20 -12 -10 -9 -8 -120 -28 3.1...