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AO4476 - N-Channel MOSFET

General Description

The AO4476/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

AO4476 and AO4476L are electrically identical.

Key Features

  • VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested S D S D S D G D SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.3mH B EAR Junction and.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4476/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AO4476 and AO4476L are electrically identical. -RoHS Compliant -AO4476L is Halogen Free Features VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.