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AO4476A - 30V N-Channel MOSFET

General Description

The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is suitable for use as a high side switch in SMPS and general purpose applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4476A 30V N-Channel MOSFET General Description Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 15A < 7.7mW < 10.8mW D SOIC-8 D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.