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AO4474 - N-Channel MOSFET

General Description

The AO4474 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and www.DataSheet4U.com general purpose applications.

Standard Product AO4474 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 13.4A (VGS = 10V) RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4474 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and www.DataSheet4U.com general purpose applications. Standard Product AO4474 is Pb-free (meets ROHS & Sony 259 specifications). AO4474L is a Green Product ordering option. AO4474 and AO4474L are electrically identical. Features VDS (V) = 30V ID = 13.4A (VGS = 10V) RDS(ON) <11.5mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.