AS8C803600 Datasheet, Alliance Semiconductor

256K x 36, 512K x 18 memory configurations Supports high system speed:
  – 150MHz 3.8ns clock access time
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The 256K x 36 / 512K x 18. The SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature o.