-100/-18A,RDS(ON)= 46mΩ@VGS= -10V -100/-10A,RDS(ON)= 52mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power.

Pin Description ( TO-252-2L ) AFP5010S 100 P-Channel Enhancement Mode MOSFET Features -100/-18A,RDS(ON)= 46mΩ@VGS= -10.

AFP5010S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP5039S

AFP02N8-000

AFP02N8-212

AFP02N8-213

AFP1013

AFP1013E

AFP1023

AFP1023E

AFP1033

AFP1033E

AFP1073

AFP1073E

AFP1303

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