-60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-23-3L ) AFP2379 60V P-Channel Enhancement Mode MOSFET Features -60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V.

AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP2379AS

AFP2301AS

AFP2303A

AFP2303AS23RG

AFP2307A

AFP2309A

AFP2311

AFP2311A

AFP2317

AFP2319A

AFP2319AS23RG

AFP2323A

AFP2325A

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