-20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exception.

Pin Description ( SOT-23 ) AFP2367AS 20V P-Channel Enhancement Mode MOSFET Features -20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V .

AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

AFP2363AS

AFP2301AS

AFP2303A

AFP2303AS23RG

AFP2307A

AFP2309A

AFP2311

AFP2311A

AFP2317

AFP2319A

AFP2319AS23RG

AFP2323A

AFP2325A

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