-120V/-1.0A,RDS(ON)=1.65Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.75Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC .

Pin Description ( SOT-23 ) AFP2345A 120V P-Channel Enhancement Mode MOSFET Features -120V/-1.0A,RDS(ON)=1.65Ω@VGS=-10V.

AFP2345A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP2341

AFP2343A

AFP2301AS

AFP2303A

AFP2303AS23RG

AFP2307A

AFP2309A

AFP2311

AFP2311A

AFP2317

AFP2319A

AFP2319AS23RG

AFP2323A

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