-25V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V -25V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC .

Pin Description ( SOT-23 ) AFP2333A 25V P-Channel Enhancement Mode MOSFET Features -25V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V.

AFP2333A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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