AFP2325A mosfet equivalent, p-channel mosfet.
z -100V/-1.0A,RDS(ON)=600mΩ@VGS=-10V z -100V/-0.5A,RDS(ON)=650mΩ@VGS=-4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and max.
Pin Description ( SOT-23 )
AFP2325A
100V P-Channel Enhancement Mode MOSFET
Features
z -100V/-1.0A,RDS(ON)=600mΩ@VGS=-1.
AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
TAGS
Download (Size : 499.60KB)