30V/10A,RDS(ON)=14mΩ@VGS=10V 30V/ 7A,RDS(ON)=17mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capa.

Pin Description ( DFN3.3X3.3-8L ) AFN7716S 30V N-Channel Enhancement Mode MOSFET Features 30V/10A,RDS(ON)=14mΩ@VGS=10V.

AFN7716S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFN7002AS

AFN7002DS

AFN7002ES

AFN7002KAS

AFN7002LDS

AFN7002LKAS

AFN7106S

AFN7308S

AFN7400

AFN7402

AFN7412

AFN7412S

AFN7420

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