30V/8A,RDS(ON)=24mΩ@VGS=10V 30V/7A,RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabi.

Pin Description ( DFN3.3X3.3-8L ) AFN7412S 30V N-Channel Enhancement Mode MOSFET Features 30V/8A,RDS(ON)=24mΩ@VGS=10V .

AFN7412S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFN7412

AFN7400

AFN7402

AFN7420

AFN7424S

AFN7426S

AFN7434S

AFN7472S

AFN7002AS

AFN7002DS

AFN7002ES

AFN7002KAS

AFN7002LDS

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