AFN7400 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

* 30V/3.6A,RDS(ON)=70mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=75mΩ@VGS=4.5V
* 30V/2.2A,RDS(ON)=90mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS (.

Application

Pin Description ( SOT-323 ) AFN7400 30V N-Channel Enhancement Mode MOSFET Features
* 30V/3.6A,RDS(ON)=70mΩ@VGS=10V.

Description

AFN7400, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

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