Download the AFN7412 datasheet PDF.
This datasheet also covers the AFN7412-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
Description
AFN7412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Features
- 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.