AFN7412 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.

Application

Pin Description ( SOT-323 ) AFN7412 20V N-Channel Enhancement Mode MOSFET Features 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/.

Description

AFN7412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

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