AFN6870S mosfet equivalent, n-channel mosfet.
z 100V/20A,RDS(ON)=6.0mΩ@VGS=10V z 100V/15A,RDS(ON)=8.0mΩ@VGS=4.5V z Super high density cell design for extremely low
RDS (ON) z DFN5X6-8L package design
Application
z N.
Pin Description ( DFN5X6-8L )
Features
z 100V/20A,RDS(ON)=6.0mΩ@VGS=10V z 100V/15A,RDS(ON)=8.0mΩ@VGS=4.5V z Super high.
AFN6870S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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