30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package desig.

Pin Description ( TSOP-6 ) AFN6800WS 30V N-Channel Enhancement Mode MOSFET Features 30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/.

AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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