z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TSOP-6 package design Application z Powe.

Pin Description ( TSOP-6 ) AFN6810W 100V N-Channel Enhancement Mode MOSFET Features z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V .

AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6800WS

AFN6802WS

AFN6804S

AFN6820

AFN6830

AFN6870S

AFN6882S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

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