AFN4998W mosfet equivalent, n-channel mosfet.
100V/5.6A,RDS(ON)=120mΩ@VGS=10V 100V/4.2A,RDS(ON)=130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Motor and Lo.
Pin Description ( SOP-8P )
AFN4998W
100V N-Channel Enhancement Mode MOSFET
Features
100V/5.6A,RDS(ON)=120mΩ@VGS=10V 10.
AFN4998W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
TAGS
Download (Size : 582.60KB)