N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)= 10mΩ@VGS=10V 40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V Application Car Charger P.

Pin Description ( SOP-8P ) Features N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel.

AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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