90V/7.6A,RDS(ON)=68mΩ@VGS=10V 90V/6.8A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load C.

Pin Description ( SOP-8P ) AFN4996W 90V N-Channel Enhancement Mode MOSFET Features 90V/7.6A,RDS(ON)=68mΩ@VGS=10V 90V/6.

AFN4996W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN4997W

AFN4998W

AFN4900W

AFN4904WS

AFN4906W

AFN4910W

AFN4914WS

AFN4922W

AFN4924W

AFN4936WS

AFN4944WS

AFN4946BW

AFN4946W

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