30V/20A,RDS(ON)=30mΩ@VGS=10V 30V/15A,RDS(ON)=38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Managemen.

Pin Description ( TO-220-3L ) AFN3630 30V N-Channel Enhancement Mode MOSFET Features 30V/20A,RDS(ON)=30mΩ@VGS=10V 30V/.

AFN3630, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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