30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Buck Converter − .

Pin Description ( TO-220-3L ) AFN3609S 30V N-Channel Enhancement Mode MOSFET Features 30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/.

AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN3606S

AFN3630

AFN3684S

AFN3006S

AFN3009S

AFN3015S

AFN3016S

AFN3019S

AFN3025S

AFN3030

AFN3302W

AFN3306WS

AFN3309WS

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