* 60V/8A,RDS(ON)=140mΩ@VGS=10V
* 60V/6A,RDS(ON)=148mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* DFN3X3-8L package design App.

Pin Description ( DFN3X3-8L ) AFN3316W 60V N-Channel Enhancement Mode MOSFET Features
* 60V/8A,RDS(ON)=140mΩ@VGS=1.

AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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