* 30V/20A,RDS(ON)=4.0mΩ@VGS=10V
* 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance a.

Pin Description ( DFN3X3-8L ) AFN3306WS 30V N-Channel Enhancement Mode MOSFET Features
* 30V/20A,RDS(ON)=4.0mΩ@VGS.

AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

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