* 30V/16A,RDS(ON)=17mΩ@VGS=10V
* 30V/10A,RDS(ON)=19mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* DFN3X3-8L package design App.

Pin Description ( DFN3X3-8L ) AFN3310W 30V N-Channel Enhancement Mode MOSFET Features
* 30V/16A,RDS(ON)=17mΩ@VGS=1.

AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN3316W

AFN3302W

AFN3306WS

AFN3309WS

AFN3334WS

AFN3006S

AFN3009S

AFN3015S

AFN3016S

AFN3019S

AFN3025S

AFN3030

AFN3400A

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