100V/4.0A,RDS(ON)= 320mΩ@VGS=10V 100V/4.0A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( T.

Features 100V/4.0A,RDS(ON)= 320mΩ@VGS=10V 100V/4.0A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extreme.

AFN1520, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN1500S

AFN1501S

AFN1510S

AFN1530

AFN1010S

AFN1012

AFN1012E

AFN1024

AFN1024E

AFN1026S

AFN1032

AFN1032E

AFN1034

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