AFN1510S mosfet equivalent, n-channel enhancement mode mosfet.
100V/25A,RDS(ON)= 46mΩ@VGS=10V 100V/20A,RDS(ON)= 52mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
High Freque.
Pin Description ( TO-220-3L )
Features
100V/25A,RDS(ON)= 46mΩ@VGS=10V 100V/20A,RDS(ON)= 52mΩ@VGS=4.5V Super high densi.
AFN1510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
TAGS
Download (Size : 575.19KB)