AFC6606W datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.5V Super high density.

Application

Pin Description ( SOT-23-6L ) Features N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Chan.

Description

AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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