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AFC6332 - N&P-Channel MOSFET

Download the AFC6332 datasheet PDF. This datasheet also covers the AFC6332-Alfa variant, as both devices belong to the same n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.8V Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC6332-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC6332
Manufacturer Alfa-MOS
File Size 1.07 MB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC6332 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFC6332ES N&P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFC6332 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.