AFC6332ES mosfet equivalent, n&p-channel mosfet.
N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V
P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RD.
Pin Description ( SOT-363 )
Features
N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5.
AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other .
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TAGS
&P-Channel
Manufacturer
Related datasheet
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