Datasheet4U Logo Datasheet4U.com

HSCH-5332 - Beam Lead Schottky Diodes

Download the HSCH-5332 datasheet PDF. This datasheet also covers the HSCH-5318 variant, as both devices belong to the same beam lead schottky diodes family and are provided as variant models within a single manufacturer datasheet.

Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

Features

  • Platinum Tri-Metal System High Temperature Stability.
  • Silicon Nitride Passivation Stable, Reliable Performance.
  • Low Noise Figure Guaranteed 7.5 dB at 26 GHz.
  • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics.
  • Rugged Construction 4 Grams Minimum Lead Pull.
  • Low Capacitance 0.10 pF Max. at 0 V.
  • Polyimide Scratch Protection Outline 07 130 (5) 100 (4).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSCH-5318-Agilent.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSCH-5332
Manufacturer Agilent
File Size 69.50 KB
Description Beam Lead Schottky Diodes
Datasheet download datasheet HSCH-5332 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HSCH-5332 Beam Lead Schottky Diodes AVAGO
HSCH-5330 Beam Lead Schottky Diodes AVAGO
HSCH-5331 Beam Lead Schottky Diodes AVAGO
HSCH-5300 Beam Lead Schottky Diodes Hewlett-Packard
HSCH-5310 Beam Lead Schottky Diodes AVAGO

Other Datasheets by Agilent

Part Number Description
HSCH-5330 Beam Lead Schottky Diodes
HSCH-5336 Beam Lead Schottky Diodes
HSCH-5310 Beam Lead Schottky Diodes
HSCH-5312 Beam Lead Schottky Diodes
HSCH-5314 Beam Lead Schottky Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Beam Lead Schottky Diodes for Mixers and Detectors (1– 26 GHz) Technical Data HSCH-5300 Series Features • Platinum Tri-Metal System High Temperature Stability • Silicon Nitride Passivation Stable, Reliable Performance • Low Noise Figure Guaranteed 7.5 dB at 26 GHz • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics • Rugged Construction 4 Grams Minimum Lead Pull • Low Capacitance 0.10 pF Max. at 0 V • Polyimide Scratch Protection Outline 07 130 (5) 100 (4) CATHODE GOLD LEADS 225 (9) 200 (8) 310 (12) 250 (10) 30 MIN (1) 225 (9) 170 (7) 135 (5) 90 (3) 135 (5) 90 (3) 12 (.5) 8 (.3) Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
Published: |