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HSCH-5300 - Beam Lead Schottky Diodes

Download the HSCH-5300 datasheet PDF. This datasheet also covers the HSCH-5300_Hewlett variant, as both devices belong to the same beam lead schottky diodes family and are provided as variant models within a single manufacturer datasheet.

Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

Features

  • Platinum Tri-Metal System High Temperature Stability.
  • Silicon Nitride Passivation Stable, Reliable Performance.
  • Low Noise Figure Guaranteed 7.5 dB at 26 GHz.
  • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics.
  • Rugged Construction 4 Grams Minimum Lead Pull.
  • Low Capacitance 0.10 pF Max. at 0 V.
  • Polyimide Scratch Protection Outline 07.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSCH-5300_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSCH-5300
Manufacturer Hewlett-Packard
File Size 102.33 KB
Description Beam Lead Schottky Diodes
Datasheet download datasheet HSCH-5300 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HSCH-5310 Beam Lead Schottky Diodes Agilent
HSCH-5310 Beam Lead Schottky Diodes AVAGO
HSCH-5312 Beam Lead Schottky Diodes Agilent
HSCH-5312 Beam Lead Schottky Diodes AVAGO
HSCH-5314 Beam Lead Schottky Diodes Agilent

Other Datasheets by Hewlett-Packard

Part Number Description
HSCH-9101 (HSCH-9xx1) GaAs Beam Lead Schottky Barrier Diodes
HSCH-9201 (HSCH-9xx1) GaAs Beam Lead Schottky Barrier Diodes
HSCH-9251 (HSCH-9xx1) GaAs Beam Lead Schottky Barrier Diodes

Full PDF Text Transcription

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www.DataSheet4U.com Beam Lead Schottky Diodes for Mixers and Detectors (1– 26 GHz) Technical Data HSCH-5300 Series Features • Platinum Tri-Metal System High Temperature Stability • Silicon Nitride Passivation Stable, Reliable Performance • Low Noise Figure Guaranteed 7.5 dB at 26 GHz • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics • Rugged Construction 4 Grams Minimum Lead Pull • Low Capacitance 0.10 pF Max. at 0 V • Polyimide Scratch Protection Outline 07 CATHODE 130 (5) 100 (4) GOLD LEADS 135 (5) 90 (3) 135 (5) 90 (3) 225 (9) 200 (8) 310 (12) 250 (10) 225 (9) 170 (7) 12 (.5) 8 (.3) 30 MIN (1) Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
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