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HSCH-5332 - Beam Lead Schottky Diodes

Download the HSCH-5332 datasheet PDF. This datasheet also covers the HSCH-5314 variant, as both devices belong to the same beam lead schottky diodes family and are provided as variant models within a single manufacturer datasheet.

Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

Features

  • Platinum tri-metal system High temperature stability.
  • Silicon nitride passivation Stable, reliable performance.
  • Low noise figure Guaranteed 7.5 dB at 26 GHz.
  • High uniformity Tightly controlled process insures uniform RF characteristics.
  • Rugged construction 4 grams minimum lead pull.
  • Low capacitance 0.10 pF max. at 0 V.
  • Polyimide scratch protection The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Eq.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSCH-5314-AVAGO.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSCH-5332
Manufacturer AVAGO
File Size 75.53 KB
Description Beam Lead Schottky Diodes
Datasheet download datasheet HSCH-5332 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HSCH-5332 Beam Lead Schottky Diodes Agilent
HSCH-5330 Beam Lead Schottky Diodes Agilent
HSCH-5336 Beam Lead Schottky Diodes Agilent
HSCH-5300 Beam Lead Schottky Diodes Hewlett-Packard
HSCH-5310 Beam Lead Schottky Diodes Agilent

Other Datasheets by AVAGO

Part Number Description
HSCH-5330 Beam Lead Schottky Diodes
HSCH-5331 Beam Lead Schottky Diodes
HSCH-5310 Beam Lead Schottky Diodes
HSCH-5312 Beam Lead Schottky Diodes
HSCH-5314 Beam Lead Schottky Diodes

Full PDF Text Transcription

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HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits.
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