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MS1336 - RF & MICROWAVE TRANSISTORS

Description

The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications.

The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.

Features

  • 175 MHz.
  • 12.5 VOLTS.
  • POUT = 30W.

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Datasheet Details

Part number MS1336
Manufacturer Advanced Power Technology
File Size 101.35 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1336 Datasheet

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Full PDF Text Transcription

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
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