logo

MS1336 Datasheet, Advanced Power Technology

MS1336 transistors equivalent, rf & microwave transistors.

MS1336 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 101.35KB)

MS1336 Datasheet
MS1336 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 101.35KB)

MS1336 Datasheet

Features and benefits


* 175 MHz
* 12.5 VOLTS
* POUT = 30W MINIMUM
* GP = 10 dB GAIN
* COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon .

Application

Features
* 175 MHz
* 12.5 VOLTS
* POUT = 30W MINIMUM
* GP = 10 dB GAIN
* COMMON EMITTER CONFIGURATIO.

Description

The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. MS1336 ABSOLUTE M.

Image gallery

MS1336 Page 1 MS1336 Page 2 MS1336 Page 3

TAGS

MS1336
MICROWAVE
TRANSISTORS
Advanced Power Technology

Manufacturer


Advanced Power Technology

Related datasheet

MS1337

MS1329

MS13N30

MS13N50

MS13P21

MS1

MS1.5

MS1000

MS1001

MS1003

MS1003SH

MS1004

MS1004SH

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts