Datasheet4U Logo Datasheet4U.com

MS1007 - RF & MICROWAVE TRANSISTORS

General Description

The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications.

This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.

Key Features

  • 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB.

📥 Download Datasheet

Datasheet Details

Part number MS1007
Manufacturer Advanced Power Technology
File Size 164.94 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1007 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1007 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4.