MS1000 Description
The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB munications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36...
MS1000 Key Features
- 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM MON EMITTER CONFIGURATION