MS1008 transistors equivalent, rf & microwave transistors.
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* 30 MHz 50 VOLTS IMD =
–30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1008.
Features
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* 30 MHz 50 VOLTS IMD =
–30 dB POUT = 150 WATTS GP = 14 dB M.
The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
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