2N60L mosfet equivalent, n-channel mosfet.
* RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche ene.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES * RDS(ON) = 3.8Ω.
The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed .
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