SSC8020GS9 mosfet equivalent, n-channel enhancement mode mosfet.
*
VDS VGS
RDSon TYP
ID
240mR@4V5
280mR@2V5
20V ±8V
0.4A
410mR@1V8
*
450mR@1V5
* General Description
This device is a N-Channel enhancement mode
M.
especially for battery powered
circuits, the tiny and thin outline saves PCB consumption.
Applications
* Replace .
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
DMOS trench technology .This device particularly suits
low voltage applications, especially for battery powered
circuits, the tiny and thin outline s.
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Related datasheet
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