SSC8020GS6 mosfet equivalent, n-channel enhancement mode mosfet.
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VDS 20V
VGS ±8V
RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8
ID 750mA
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* General Description
This device is a N-Channel enhancement mode MOSFET which is .
especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
* Replace D.
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .
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