| Part Number | Description | Manufacture |
|---|---|---|
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AMPLIFIER TRANSISTORS |
 Motorola |
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N-Channel Power MOSFET • 2A, 200V • rDS(ON) = 3.500Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Trans |
 Intersil Corporation |
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Amplifier Transistors 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 |
 Motorola Inc |
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NPN Amplifier Transistor • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.0 Collector Current − Continuous |
 ON Semiconductor |
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NPN SILICON PLANAR SWITCHING TRANSISTORS |
 TRANSYS |
|
|
N-Channel Power MOSFET • 2A, 200V • rDS(ON) = 3.500Ω Symbol D G Ordering Information PART NUMBER RFP2N20 PACKAGE TO-220AB BRAND RFP2N20 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-518 CAUTION: |
Intersil Corporation |
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Amplifier Transistor (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Curren |
Motorola Inc |
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POWER FIELD EFFECT TRANSISTOR |
Motorola |
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NPN SILICON PLANAR SWITCHING TRANSISTORS |
 CDIL |
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NPN SILICON PLANAR SWITCHING TRANSISTORS |
TRANSYS |
| Total 15 results |
