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Intersil Electronic Components Datasheet

RFP2N20 Datasheet

2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET

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RFP2N20 pdf
Data Sheet
RFP2N20
July 1999 File Number 2881.2
2A, 200V, 3.500 Ohm, N-Channel Power
MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N20
TO-220AB
RFP2N20
NOTE: When ordering, include the entire part number.
Features
• 2A, 200V
• rDS(ON) = 3.500
Symbol
G
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
S
4-518
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP2N20 Datasheet

2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET

No Preview Available !

RFP2N20 pdf
RFP2N20
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP2N20
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
200
V
Drain to Gate Voltage (RGS = 20k) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
2
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
5
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
25
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.2 W/ oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
ID = 250µA, VGS = 0
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0
ID = 2A, VGS = 10V, (Figures 6, 7)
ID = 2A, VGS = 10V
ID 1A, VDD = 100V, RG = 50
VGS = 10V, RL = 96.5
(Figure 10)
VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed test: width 300µs duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
200 -
-
2 - 4V
- - 1 µA
- - 25 µA
- - ±100 nA
-
-
3.500
- - 7.0 V
- 15 25 ns
- 20 30 ns
- 25 40 ns
- 15 25 ns
- - 200 pF
- - 60 pF
- - 25 pF
- - 5 oC/W
MIN TYP MAX UNITS
- - 1.4 V
- 200 -
ns
4-519


Part Number RFP2N20
Description 2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 5 Pages
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